Atomic layer deposition with point of use generated reactive gas species

ABSTRACT

A method for atomic layer deposition providing a dispenser unit used to prevent mixing of a precursor gas and an input gas. From the dispenser unit a flow of the input gas is provided over a surface of the workpiece wherein a beam of the electromagnetic radiation is directed into the input gas in close proximity to the surface of the workpiece, but spaced a finite distance therefrom. The input gas is dissociated by the beam producing a high flux point of use generated reactive gas species that reacts with a surface reactant formed on the surface of the workpiece by a direct flow of the precursor gas flown from the dispensing unit. The surface reactant and reactive gas species react to form a desired monolayer of a material on the surface of the workpiece.

CROSS REFERNCE TO RELATED APPLICATIONS

[0001] This application is a continuation of currently pendingapplication Ser. No. 10/091,938, filed Mar. 5, 2002, which related topatent application Ser. No. 09/998073 for “A Method to Provide High Fluxof Point of Use Activated Reactive Species for SemiconductorProcessing,” filed on Nov. 30, 2001.

BACKGROUND OF THE INVENTION

[0002] The invention pertains to semiconductor processing and inparticular, to an improved atomic layer deposition method using a pointof use generated reactive gas species for semiconductor processing.

[0003] Atomic layer deposition (ALD), also known as atomic layer epitaxy(ALE) and atomic layer chemical vapor deposition (ALCVD), offers manyadvantages over the traditional deposition methods. ALD relies onself-limiting surface reactions in order to provide accurate thicknesscontrol, excellent conformality, and uniformity over large areas. As themicroscopic features on a chip grow increasingly narrow and deep, theseunique features make ALD one of the most promising deposition methods inthe manufacturing of the future circuits.

[0004] The feature that makes ALD a unique deposition method compared tochemical vapor deposition (CVD) is that it deposits atoms or moleculeson a wafer a single layer at a time. Additionally, ALD films aredeposited at temperatures significantly lower than comparable CVDprocesses, thereby contributing to lower thermal exposure of the waferduring processing. Furthermore, as another distinction from CVD methods,no strict precursor flux homogeneity is required in ALD because of theself-limiting growth mechanism. The flux has only to be large enough tofully saturate the surface with the given reactant. This enables, forexample, the utilization of low vapor pressure solids, which aredifficult to be delivered at constant rates.

[0005] ALD accomplishes deposition by introducing gaseous precursorsalternately onto a workpiece such as, for example, semiconductorsubstrate or wafer. Under properly adjusted processing conditions, i.e.,deposition temperature, reactant dose, length of precursor, and purgepulses, a chemisorbed monolayer of a first reactant is left on thesurface of the workpiece after a purge sequence. Typically, the purgesequence is completed by evacuating or purging the entire reactorchamber. Afterwards, the first reactant is reacted subsequently with asecond reactant pulse, such as a flux of a generated reactive gasspecies, to form a monolayer of a desired material along with anygaseous reaction byproducts, such as when compounds are used asprecursors. The surface reactions are self-controlled and produce nodetrimental gas phase reactions, thereby enabling accurate control offilm thickness by counting the number of deposition cycles.

[0006] In one particular ALD method, there is a high degree of interestin using a point of use generated reactive gas species. However, for ALDprocesses, it is difficult to generate a high flux of short-livedreactive gas species on the surface of the wafers and cycle it through anumber of on/off states at a fast rate required for high throughput ALDprocesses.

SUMMARY OF THE INVENTION

[0007] The present invention solves the above-mentioned difficulties byproviding an improved atomic layer deposition method and system. Inparticular, a dispenser unit according to the present invention is usedwith a point of use generated reactive gas species for atomic layerdeposition, which permits the cycling of the system through a number ofon/off states at a fast rate for higher processing throughput.

[0008] In a reaction chamber containing a workpiece, a precursor gas isflown directly onto an exposed surface of the workpiece from thedispenser unit to form a surface reactant thereon. Additionally, aninput gas is flown in through a side of the dispenser unit. The flows ofprecursor and input gases are separated by a pump/purge setup on thedispenser unit designed to prevent mixing. As the workpiece is scannedunder the dispenser unit to form the surface reactant, the input gas isexposed to a focused beam of electromagnetic radiation. Theelectromagnetic radiation dissociates a gaseous constituent of the inputgas creating the high flux of point of use generated reactive gasspecies. The incoming flux of the generated reactive gas species reactswith the surface reactant in a complete and self-limiting reactionforming a desired monolayer of a material thereon. Multiple dispenserunits can be used to increase the ALD process.

[0009] A system and apparatus for generating a high flux of short-livedactivated reactive gas species using transmission gas (es) is disclosedby commonly assigned patent application: Ser. No. 09/998073 for “AMethod to Provide High Flux of Point of Use Activated Reactive Speciesfor Semiconductor Processing,” filed on Nov. 30, 2001, which is hereinincorporated fully by reference.

[0010] In one aspect, the present invention encompasses a method ofchemically treating a surface of a workpiece. The method comprisesexposing the surface of the workpiece to a direct flow of a precursorgas to form a surface reactant thereon, and providing a flow of an inputgas above the surface of the workpiece. The method further comprisespreventing the mixture of the precursor gas and the input gas with apurge gas, directing a beam of electromagnetic radiation into the inputgas to produce a high flux of generated reactive gas species, andreacting the generated reactive gas species with the surface reactant.

[0011] In another aspect, the present invention encompasses a system forchemically treating a surface of a workpiece. The system comprises asupply of an input gas, a supply of a precursor gas, and a supply of apurge gas. A dispenser unit is adapted to expose the surface of theworkpiece to a direct flow of the precursor gas for a surface reactantformation, to provide a flow of the input over the workpiece, and toprovide the purge gas between the precursor gas and the input gas toprevent mixing of the precursor and input gases. The dispenser unitfurther includes a pair of evacuation ports for evacuating the purgegas. A source is adapted to converge a beam of electromagnetic radiationin the flow of the input gas in close proximity to the surface of theworkpiece, but spaced a finite distance therefrom, to dissociate theinput gas into a high flux of generated reactive gas species that reactswith the surface reactant to chemically treat the surface of theworkpiece.

[0012] In still another aspect, the present invention encompasses adispenser unit adapted for use in a reaction chamber for atomic layerdeposition of a material onto a surface of a workpiece. The dispenserunit comprises a first gas port adapted to provide a flow on an inputgas over the surface of the workpiece to be dissociated by a radiationbeam into a point of use generated reactive species. Further included isa second gas port adapted to provide a direct flow of a precursor gasonto the surface of the workpiece which by chemisorption forms a firstsurface reactant, and a third gas port adapted to flow a purge gas toprevent mixing of the input and precursor gases. Also provided is a pairof evacuation ports adapted to evacuation at least the purge gas.

[0013] These and other features and objects of the present inventionwill be apparent in light of the description of the invention embodiedherein.

BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The following detailed description of the embodiments of thepresent invention can be best understood when read in conjunction withthe following drawings, where like structure is indicated with likereference numerals and in which:

[0015]FIG. 1 is an enlarged cross sectional view of a workpiece during achemical treatment procedure according to the present invention;

[0016]FIG. 2 is a diagrammatic side view of a structure adapted tochemically treat a surface of a workpiece according to the presentinvention;

[0017]FIG. 3 is a diagrammatic top view of a structure adapted tochemically treat a surface of a workpiece according to the presentinvention; and

[0018]FIG. 4 is a process flow chart of a program which implements anembodiment of the atomic layer deposition method according to thepresent invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0019] In the following detailed description that follows, reference ismade to various specific embodiments in which the invention may bepracticed. These embodiments are described in sufficient detail toenable those skilled in the art to practice the invention, and it is tobe understood that other embodiments may be utilized and that specificequipment, processing steps, energy sources, and other changes may bemade without departing from the spirit and scope of the presentinvention.

[0020] The term “workpiece” as used herein includes semiconductorsubstrate, printed circuits, and other structures that may be chemicallytreated by the method and system of the invention.

[0021] The terms “substrate” as used herein include anysemiconductor-based or other structure having an exposed surface inwhich to form a structure using the system or method of this invention.Substrate is to be understood as including silicon-on-insulator, dopedand undoped semiconductors, epitaxial layers of silicon supported by abase semiconductor foundation, and other semiconductor structures.Furthermore, when reference is made to a substrate in the followingdescription, previous process steps may have been utilized to formactive devices, regions or junctions in the base semiconductor structureor foundation.

[0022]FIG. 1 discloses an improved atomic layer deposition method andapparatus according to the present invention providing a point of usegenerated/activated reactive gas species for processing a surface 2 of aworkpiece 4. A first precursor gas, indicated by 5, is flown directlyonto the surface 2 of the workpiece from a first gas port 6 a of adispenser unit 8. From a side of the dispenser unit 8, a flow of aninput gas 10 is provided from a second gas port 6 b in a direction awayfrom the flow of the precursor gas 5.

[0023] Between the first and second gas ports 6 a and 6 b, the dispenserunit 8 further includes a pair of evacuation ports 12 a and 12 b, and athird gas port 6 c. As illustrated, juxtaposed to the first evacuationport 12 a are the first and third gas ports, 6 a and 6 c, and juxtaposedto the second evacuation port 12 b are the second and third gas ports, 6b and 6 c. The third gas port 6 c is used to flow a purge gas, indicatedby 14, directly onto the surface 2 of the workpiece.

[0024] In a purge/pump sequence, as the precursor gas 5, input gas 10,and purge gas 14 are flown from the dispenser unit 8, the pair ofevacuation ports 12 a and 12 b pump out any residuals/gases in theirgeneral vicinity. By this arrangement, ports 6 c and 12 a-b on thedispenser unit 8 prevent the mixing of the precursor gas 5 and the inputgas 10 by creating a pump/purge barrier therebetween.

[0025] During processing, ALD pulse lengths are determined by the spacebetween the gas ports as well as a scan speed of workpiece. Accordingly,under properly adjusted processing conditions (i.e., depositiontemperature, reactant dose, and length of precursor and purge gasespulses), scanning the workpiece 4 under the dispenser unit 8 in thedirection indicated by “X”, leaves a chemisorbed monolayer of a surfacereactant, illustrated by symbols “A”, on the surface 2 after thepurge/pump sequence of the dispenser unit 8 with flows of the precursorgas 5 and purge gas 14.

[0026] While scanning the workpiece 4, a beam of electromagneticradiation 16 is directed into the input gas 10 producing at the point ofuse a high flux of short-lived generated reactive gas species,illustrated by symbols “B”, by dissociating a gaseous constituent of theinput gas 10. As the reactive gas species B reaches the surface 2 of theworkpiece 4, reactants A and B react together in a complete andself-limiting reaction which forms a desired monolayer of a material,illustrated by symbol S, on the surface 2 of the workpiece 4. Materialmonolayer S may be an element or a compound. Therefore, theabove-described multi-port dispenser unit 8 permits at the same time theformation of both surface reactant A on a first portion of the surface 2of the workpiece 4 and the desired material monolayer S on a subsequentsurface portion of the workpiece.

[0027] The beam of electromagnetic radiation 16 may advantageously beprovided as a converging laser beam. Additionally, to ensure thatmaximum energy is provided at the focal point of the laser beam, atransmission gas 18 that is substantially nonattenuating to preselectedwavelengths of electromagnetic radiation may be provided by a fourth gasport 6 d. Furthermore, the second gas port 6 b may be a nozzle providinga laminar flow of the input gas 10 over the surface 2 of the workpiece 4such that the beam 16 converges in the flow in close proximity to thesurface of the workpiece, but spaced a finite distance therefrom. Thisfinite distant is indicated by symbol “H.” It is to be appreciated thatthe input gas is provided over the surface of the workpiece in a gaslayer having a thickness that is at least large enough to accommodatethe finite distance H.

[0028] It is to be appreciated that a laminar flow prevents the inputgas from spiraling over the surface 2 of the workpiece 4, therebyminimizing non-uniform distribution of the generated reactive gasspecies B. Baffles may be incorporated into the nozzle 6 b to break upthe incoming gas stream into the desired laminar flow. Furthermore, thewidth of nozzle 6 b can be made adjustable to optimize the gas flow ratefor particular chemically treatments of the surface 2 of the workpiece4.

[0029] With regard to distance H, the beam 16 is focused in proximity tothe surface 2 of the workpiece 4 such that maximum beam energydissociates at the point of use a gaseous constituent of the input gas10 into the high flux of generated reactive gas species B. Preferably,distance H is less than a few mean-free-path lengths of the generatedreactive gas species B, or from about 2 millimeters to about 4millimeters above the surface 2 of the workpiece 4. At a distance fromabout 2 millimeters to about 4 millimeters, the generated flux ofreactive gas species B is closes enough in order to migrate to thesurface 2, yet far enough that the focal point of the laser beam 16 doesnot inadvertently impact the workpiece 4.

[0030] It is to be further appreciated that the laser beam 16 candissociate more than one generated reactive gas species B depending onthe composition of the input gas 10, and also depending on theparticular wavelength(s) of electromagnetic radiation present in thelaser beam 16. Therefore, besides reducing energy losses of the laser atits focal point, the present invention also gives access to new, quicklydisappearing metastables that would otherwise disappear and never reachthe surface 2 of the workpiece if formed well above the wafer surface.In the next sections, the above-described methodology and apparatus isfurther disclosed by the exemplary embodiments of a processing system 20shown by FIGS. 2-4.

[0031]FIG. 2 is a diagrammatic sectional side view of the majorcomponent parts of an exemplary embodiment of a processing system 20having a chamber 22 for containing the workpiece 4 to be processed. In atypical example, the workpiece 4 comprises a semiconductor wafe of 1 to8 inches in diameter and 0.127 to 0.89 mm thick, which is supported upona conventional chuck 24.

[0032] The chamber 22 is sealable such that it may contain and hold asubambient pressure of from about 0.1 Torr to about 100 Torr of agaseous atmosphere, generally indicated by 26, which is supplied to thechamber from first and second gas sources 28 a and 28 b, respectively.As illustrated by FIG. 3, the first gas source 28 a is in gascommunication with the chamber 22, and provides the precursor and purgegases 5 and 14, and optionally, transmission gas 18. These gases eachmay be a single gas or a mixture of such gasses.

[0033] The second gas source 28 b is also in gas communication with thechamber 22 and provides the input gas 10. Gases 5, 10, 14 and/or 18 areregulated in a conventional manner, such as for example, in-linepressure regulators 30 a and 30 b, values 32 a and 32 b, and mass flowmeters 34 a and 34 b. When introducing mixtures of gases in the chamber22, including other conditioning gas/gases to aid and/or inhibit suchchemical processes, conventional mixing chambers 36 a and 36 b may beused, if desired, to homogenize the gaseous mixture(s).

[0034] After completion of the ALD processes, the gaseous atmosphere 26within the chamber 22 may be quickly evacuated by a first mechanicalexhaust pump 38 a connected also in gas communication with the chambervia a first exhaust valve 40 a. However, it is to be appreciated thatunlike prior art type chambers, the entire gaseous atmosphere 26 withinthe chamber 22 does not need to be purge or exhausted between pulsephases of the ALD process due to the purge/pump set-up of the dispenserunit 8 provided therein. As illustrated by FIG. 3, the pair ofevacuation ports 12 a and 12 b of the dispenser units are in gascommunication with a second mechanical exhaust pump 38 b and regulatedby a second exhaust valve 40 b for the above purpose.

[0035] The input gas 10 is a gas or mixture of gases that absorbpredetermined wavelengths of electromagnetic energy and dissociate toform the desired generated reactive gas species B. Such gases thatinclude: N₂O, NO₂, NH₃, H₂, H₂O, N₂, O₂, O₃, CCl₄, BCl₃, CDF₃, CF₄,SiH₄, CFCl₃, F₂CO, (FCO)₂, SF₅NF₂, N₂F₄, CF₃Br, CF₃NO, (CF₃)₂CO, CF₂HCl, CF₂HBr, CF₂Cl₂, CF₂Br₂, CF₂CFCl, CF₂CFH, CF₂CF₂CH₂, NH₃, CHF₃,fluorohalides, halocarbons, and combinations thereof. Such desiredreactive gas species B include: NO, OH, NH, N, F, CF₃, CF₂, CF, NF₂, NF,Cl, O, BCl₂, BCl, FCO, and combinations thereof. It is to be appreciatedthat the choice of input gas 10 employed in a photoreactive treatmentprocedure is guided by the type of chemically treatment process to becarried out.

[0036] The transmission gas 18, if used, is a gas or mixture of gasesthat is non-attenuating to predetermined wavelengths of electromagneticradiation. Such transmission gasses, as well as the purge gas includeargon, nitrogen, helium, neon, and combinations thereof.

[0037] Depending on the particular parameters used in the chamber 22,other conditioning gases may be used such as to absorb electromagneticradiation, to reduce the concentration of an reactive gas species, or asa catalyst for the reaction between the reactive gas species B and thereactant(s), such as surface reactant A. As such, a conditioning gas maybe employed for controlling the reaction rate between the reactive gasspecies B and reactant A, or for creating a minimum reaction energythreshold for limiting the production of undesirable reaction products(e.g., ozone and hazardous polymer-based reaction products).

[0038] Examples of conditioning gas molecules include nitrogen, heliumand argon. Nitrogen acts mainly to impede the reaction between materialdeficient regions and reactant gases, while argon tends to impede thediffusion of the primary reactant gas molecules, rather than toparticipate in a reaction. Helium behaves in an intermediate mannerbetween nitrogen and argon.

[0039] The chamber 22 also contains a translation stage 42 to supportthe workpiece 4 in the chuck 24 and to move it in and out of the chamber22. The translation stage 42 is electrically driven, and moves the chuck24 and workpiece 4 held thereon back and forth within the chamber 22 ata constant rate (e.g., about 6.5 mm/sec) specified by a controller 44.As best illustrated by FIG. 3, protruding banking pins 46 spaced byabout 120 degrees hold the workpiece 4 in place on the chuck 24.

[0040] In one embodiment, the translation stage 42 causes relativemotion between the surface 2 of the workpiece 4, the dispenser unit 8,and the beam 16 such that the precursor gas 5, purge gas 14, and beam 16sweeps or scans over the surface 2 of the substrate 4 during processing.In another embodiment, the workpiece 4 may be held stationary duringprocessing, and the dispenser unit 8 and scanning optics 48 of a lasersystem 50 are moved to cause the desired relative motion between thesurface 2 of the workpiece 4, the dispenser unit 8, and the beam 16.

[0041] The laser beam 16 is shaped and delivered to the chamber 22 viathe conventional laser system 50 that includes the scanning optics 48, alaser controller 52, and a laser source 54. In particular, the scanningoptics 48 typically comprises one or more mirrors 56 (only one of whichis shown) and focusing lenses 58. The mirrors 56 direct laser beam 16towards the focusing lens 58 which shapes the conventional rectangularcross-section beam 16 received from the laser source 54 into aconverging beam of electromagnetic energy proximate the surface 2 of theworkpiece 4.

[0042] In one embodiment, the focusing lens 58 forms part of a window 60of the chamber 22, such as in the embodiment when relative motion isprovided between the laser beam 16 and workpiece 4 by the translationstage 42. In other embodiments, the scanning optics 48 along with thefocusing lens 58 move relative to the window 60 to provide the desiredscanning of the surface 2 of the workpiece 4 with beam 16. The windows60 may be quartz, sapphire, or zinc selenide. In still otherembodiments, the focusing lens 58 is a cylindrical refractive lens, andboth the lens 58 and window 60 are made from fused silica which allowsvisual inspection of the chamber 22 during a photoreactive treatmentprocedure, which is useful for monitoring the progress of a reaction aswell as for end-point detection.

[0043] Additionally, although laser beam 16 is illustrated as a longnarrow band 62 that extends across the major expanse of the surface 2 ofthe workpiece 4 during processing, it is to be understood that laserbeam 16 can comprise other shapes. For example, the beam 16 may beprovided as a circular beam which traverses across an entirety of thesurface 2 of the workpiece 4 along the shown X and Y axes.Alternatively, the beam 16 can be configured to be wide enough to coveran entirety of the surface 2 of the workpiece 4 without being passedacross such surface.

[0044] Laser source 54 may be an excimer laser (for example, a CymerCX-2 excimer laser available from Cymer Laser Technologies of San Diego,Calif., USA), which generates a pulsed beam 16 at wavelengths of 248 nmand 193 nm, and adapted to provide beam energy in the range of about 100to about 5000 mJ/cm². Other lasers could be used, e.g., a tunableAlexandrite solid state pulsed laser in combination with a frequencymultiplier. As shown in FIG. 2, the cross-sectional dimensions of thebeam 16 from the laser source 54 may be in the range of 3 mm×5 mm to 5mm×15 mm. The scanning optics 48 focuses beam 16 so that at distance Habove the surface 2 of the workpiece 4, the final beam gives theappearance of a knife-edge. In particular, the laser beam 16 canpredominantly comprise a single wavelength of ultraviolet light, andsuch wavelength can be chosen to interact with a specific constituent ofthe input gas 10.

[0045] A beam dump 63 (FIG. 2) with a surface that strongly absorbsradiant energy in the range 157-250 nm (e.g., a block of hard-anodizedaluminum with a row of narrow vanes oriented in the direction of thereflected laser beam) is mounted inside the chamber 22. The beam dump 63receives radiant energy reflected from the surface 2 of the workpiece 4during processing. Additionally, a diagnostic laser beam 64 from ahelium-neon laser 66 may be introduced into the chamber 22 through thescanning optics 48, and/or through the window 60. A monitor 68 couldthen be configured to receive a reflected diagnostic beam 64 to verifythat the surface 2 has been treated without having to remove theworkpiece 4 from the chamber 22 (e.g., by interferometric or lightscattering techniques well-known in the field of surface analysis).

[0046] The translation stage 42 can comprise components for thetemperature control of workpiece 4 during processing. Such componentscan include one or both of heating and cooling components 70 to maintainthe workpiece 4 at a desired temperature. Additionally, the translationstage 42 may include various sensors that monitor pressure 72,temperature 74, and gases 76 in the chamber 22.

[0047] For purposes of controlling the surface treatment sequence, thecontroller 44 produces the necessary signals to operate processingsystem 20 in accordance with the present invention. FIG. 2 shows a blockdiagram of the controller 44. The controller 44 includes a programmablecentral processing unit (CPU) 202 that is operable with a memory 204, amass storage device 206, an input control unit 208, and a display unit210. However, those skilled in the art will realize that it would be amatter of routine skill to select an appropriate computer system tocontrol processing system 20. Additionally, those of skill in the artwill also realize that the invention could be implemented using hardwaresuch as an application specific integrated circuit (ASIC) or otherhardware circuitry. As such, it should be understood that the inventioncould be implemented, in whole or in part, in software, hardware orboth.

[0048] The controller 44 further includes well-known support circuits214 such as power supplies 216, clocks 218, cache 220, input/output(I/O) circuits 222 and the like. The I/O circuit is connected to acontrol system bus 212. The bus 212 couples to the controller 44 thein-line flow regulators 30 a and 30 b, gas values 32 a and 32 b, massflow meters 34 a and 34 b, exhaust pumps 38 a and 38 b, exhaust valves40 a and 40 b, translation stage 42, laser controller 52, heating andcooling components 70, chamber sensors 72, 74, and 76, and a chamberdoor 78. Optionally, an electrically driven mechanical arm 80, whichmoves the workpiece 4 in and out of the chamber 22 through the chamberdoor 78 to and from a transport device/chamber 82, may be alsocontrolled by the controller 44.

[0049] Other elements controlled by the controller 44 may include thefollowing: mixing chambers 36 a and 36 b for mixing different gases, andif used, transition motors (not shown) for the dispenser unit 8 andscanning optics 48. It is to be appreciated that the system controller44 provides signals to the chamber elements to cause these elements toperform operations for forming the reactive gas species in the subjectapparatus to accomplish atomic layer deposition, and othersemi-conductor processing, if desired.

[0050] The memory 204 contains instructions that the CPU 202 executes tofacilitate the performance of the processing system 20. The instructionsin the memory 204 are in the form of program code such as a program 300(FIG. 4) that implements the method of the present invention. Theprogram code may conform to any one of a number of different programminglanguages. For example, the program code can be written in C, C++,BASIC, Pascal, or a number of other languages.

[0051] The mass storage device 206 stores data and instructions andretrieves data and program code instructions from a processor-readablestorage medium, such as a magnetic disk or magnetic tape. For example,the mass storage device 206 can be a hard disk drive, floppy disk drive,tape drive, or optical disk drive. The mass storage device 206 storesand retrieves the instructions in response to directions that itreceives from the CPU 202. Data and program code instructions that arestored and retrieved by the mass storage device 206 are employed by theprocessor unit 202 for operating the processing system 20. The data andprogram code instructions are first retrieved by the mass storage device206 from a medium and then transferred to the memory 204 for use by theCPU 202.

[0052] The input control unit 208 couples a data input device, such as akeyboard, mouse, or light pen, to the processor unit 202 to provide forthe receipt of a chamber operator's inputs. The display unit 210provides information to a chamber operator in the form of graphicaldisplays and alphanumeric characters under control of the CPU 202.

[0053] The control system bus 212 provides for the transfer of data andcontrol signals between all of the devices that are coupled to thecontrol system bus 212. Although the control system bus 212 is displayedas a single bus that directly connects the devices in the CPU 202, thecontrol system bus 212 can also be a collection of buses. For example,the display unit 210 input control unit 208 and mass storage device 206can be coupled to an input-output peripheral bus, while the CPU 202 andmemory 204 are coupled to a local processor bus. The local processor busand input-output peripheral bus are coupled to form the control systembus 212. Operation

[0054] Reference is also made to FIG. 4, which is a process flow chartof the program 300 that implements the ALD methodology according to thepresent invention. Prior to ALD processing, in step 310 an appropriateset of reaction parameters are selected for use by the controller 44.Such reaction parameters include, for example but are not limited to:energy wavelength, energy density of the incident laser beam, gascomposition, pressure and mass flow rates of precursor gas 5, input gas10, purge gas 14, and optionally, transmission gas 12 inside thereaction chamber 22, stage translation rate, and temperature ofworkpiece 4.

[0055] Once the reaction parameters are selected, the workpiece 4 instep 320 is loaded into the chamber 16 through door 78, preferably fromthe transport device/chamber 82, and positioned on the wafer chuck 24against banking pins 46, preferably by mechanical arm 80, with thesurface 2 to be treated facing up. The order of selecting reactionparameters in step 310 and loading in step 320 is non-critical, and maybe completed in any order or simultaneously.

[0056] In step 330, mechanical pump 38 a pumps on the chamber 22 until apressure of between about 1 and about 10 Torr is achieved. Next, in step340 the stage 42 translates the chuck 24 and workpiece 4 at a constantrate across the chamber 22 from a rear end 84 to a forward end 86 (FIG.2). When portion of the surface 2 of the workpiece is at its properposition for processing, in step 350 the controller 44 electricallyactivates gas values 30 a and 30 b and flow regulators 32 a and 32 b (inproper sequence). The controller 44 coordinates the delivery ofprecursor gas 5, input gas 10, and optionally transmission gas 12(FIG. 1) from gas cylinders 28 a and 28 b through the dispenser unit 8according to the selected reaction parameters. Additionally, in thisstep, the controller 44 coordinates the delivery of purge gas 14, andthe pumping on evacuation ports 12 a and 12 b by pump 38 b to preventmixing of the precursor gas 5 and input gas 10 flows.

[0057] In step 360, the controller 44 coordinates with the lasercontroller 52 to deliver the laser beam 16 into the input gas flow 10.It is to be appreciated that controller 44 may be programmed to processthe entire surface of the workpiece or a targeted portion. In eithercase, the controller 44 provides for the delivery of the laser beam 16according to the selected reaction parameters such that the high flux ofpoint of use reactive gas species B is generated at the proper time toreact with surface reactant A at the selected locations of the surface 2of the workpiece 4. In most cases, the controller 44 will delay thegeneration of the high flux of point of use reactive gas species B untilreactant A is translated into its proper position for such interactionwith gas species B.

[0058] In step 370, the controller 44 checks the formation of materialmonolayer S on the surface 2 of the workpiece 4. Such as, for example,if a desired layer thickness or quality is not detected by monitor 68,the above deposition processes may be repeated without removing theworkpiece 4 from the reaction chamber 22. If the above ALD process iscompleted, the gas valves 20 a and 20 b are closed, the chamber 22 ispurged in a conventional manner, and the workpiece 4 is then removedfrom the chamber 22 in step 380 to await a next workpiece 4 forprocessing in step 390.

[0059] In addition to the above-described ALD process, in certainsituations it is may be desirous to chemically work the surface 2 of theworkpiece 4 with only the generated reactive gas species B before orafter such ALD processing. Examples of such chemical treatments include,but not limited to, etching, cleaning, removing photoresist, and otherapplications which will be apparent to those of skill in the art giventhe teachings herein. Depending on the kind of processing the workpiece4 is subjected to prior to being treated in chamber 22, and/or the typeof post-processing the workpiece 4 is to undergo, the surface 2 of theworkpiece 4 may be treated as many times as required without beingremoved from the chamber 16, and if desired, under different reactionconditions.

[0060] It is to be appreciated that the above described method andapparatus of the present invention increases ALD production rates. Theincrease in production rates results from permitting the working of thesurface 2 of the workpiece 4 with the high flux of a point of usegenerated reactive gas species while ahead of forming a surface reactantwith a flow of a precursor gas without the need to completely purge orevacuate the entire reaction chamber.

[0061] Additionally, the present invention makes it possible to use twoor more dispenser units to further increase the ALD process. In amultiple dispenser unit arrangement, for each additional radiation beamanother dispenser unit is provided, such as is illustrated by secondarydispenser unit 8′ and additionally radiation beam 16′ in FIG. 2. Sincethe function of the secondary dispenser unit 8′ and beam 16′ are thesame as dispenser unit 8 and beam 16 as described above, for brevity, nofurther discussion is provided as one skilled in the art wouldunderstand the use and benefit of such an arrangement.

[0062] In compliance with the statute, the invention has been describedin language more or less specific as to structural and methodicalfeatures. It is to be understood, however, that the invention is notlimited to the specific features shown and described, since the meansherein disclosed comprise preferred forms of putting the invention intoeffect. The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents. Any modification of the present invention which comeswithin the spirit and scope of the following claims should be consideredpart of the present invention.

What is claimed is:
 1. A method for processing a surface of a workpiececomprising: selecting a set of reaction parameters; loading theworkpiece into a reaction chamber; pumping on said reaction chamberuntil a pressure according to said selected reaction parameters isachieved; translating the workpiece at a constant rate across saidchamber according to said selected reaction parameters; flowingsimultaneously into said chamber a precursor gas, a purge gas, and aninput gas according to said selected reaction parameters; evacuatingsaid purge gas and any gases/residuals in vicinity of said purge gas toprevent mixing of the precursor and input gases; and delivering a beamof electromagnetic radiation according to said selected reactionparameters into the flow of said input gas to produce a high flux ofpoint of use generated reactive gas species which reacts with a surfacereactant formed from said precursor gas impinging on the surface of theworkpiece at selected locations.
 2. The method of claim 1 furthercomprises flowing into said chamber a transmission gas.
 3. The method ofclaim 1 wherein said pressure is from about 0.1 Torr to about 100 Torr.4. The method of claim 1 wherein said surface reactant and said reactivegas species react to form a monolayer of a material on the surface ofthe workpiece.
 5. The method of claim 4 further comprises checkingformation of said monolayer of said material on the surface of theworkpiece for completeness according to said selected reactionparameters.
 6. The method of claim 1 further comprises purgingcompletely said chamber and removing the workpiece from said chamberafter completion of said processing according to said selected reactionparameters.
 7. The method of claim 1 further comprises directing saidbeam through a window of said chamber.
 8. The method of claim 1 furthercomprises causing relative motion between the workpiece and said beam.9. The method of claim 1 wherein said flows of said input gas, precursorgas and purge gas are provided from a dispenser unit, wherein saiddispenser unit further includes a pair of evacuation ports to evacuateat least said purge gas.
 10. The method of claim 9 further comprisescausing relative motion between the workpiece, said beam, and saiddispenser unit.
 11. The method of claim 1 wherein the workpiececomprises a semiconductive substrate.
 12. An atomic layer depositionmethod for forming monolayers on a surface of a substrate, comprising:exposing the surface of the substrate to a precursor gas to form asurface reactant thereon; providing an input gas above the surface ofthe substrate simultaneously with said precursor gas; preventing themixture of said precursor gas and said input gas with a purge gas;directing a beam of electromagnetic radiation into said input gas toproduce a high flux of generated reactive gas species; and reacting saidgenerated reactive gas species with said surface reactant to form atleast a monolayer on the surface of the substrate.
 13. The method ofclaim 12, wherein said generated reactive gas species is selected fromthe group consisting of the noble gases, nitrogen, hydrogen, oxygen, andcombinations thereof.
 14. The method of claim 12 wherein the generatedreactive gas species is selected from the group consisting of NO, OH,NH, N, F, CF₃, CF₂, CF, NF₂, NF, Cl, O, BCl₂, BCl, FCO, and combinationsthereof.
 15. The method of claim 12 wherein the input gas is selectedfrom the group consisting of N₂O, NO₂, NH₃, H₂, H₂O, N₂, O₂, O₃, CCl₄,BCl₃, CDF₃, CF₄, SiH₄, CFCl₃, F₂CO,(FCO)₂, SF₅NF₂, N₂F₄, CF₃Br, CF₃NO,(CF₃)₂CO, CF₂HCl, CF₂HBr, CF₂Cl₂, CF₂Br₂, CF₂CFCl, CF₂CFH, CF₂CF₂CH₂,NH₃, CHF₃, fluorohalides, halocarbons, and combinations thereof.
 16. Themethod of claim 12 wherein the substrate is semiconductive.
 17. Themethod of claim 12 wherein said electromagnetic radiation is ultravioletradiation.
 18. The method of claim 12 wherein preventing the mixture ofsaid precursor gas and said input gas with said purge gas isaccomplished by simultaneously pumping and evacuating said purge gas.19. The method of claim 12 wherein said reactive gas species isgenerated a distance between about 2 millimeters to about 4 millimetersabove the surface of the substrate.
 20. The method of claim 12 whereinsaid purge gas is selected from the group consisting of argon, nitrogen,helium, neon, and combinations thereof.
 21. An atomic layer depositionmethod for forming monolayers on a surface of a substrate, comprising:providing the substrate to a chamber having a gaseous atmospherecontaining a transmission gas that is substantially nonattenuating topreselected wavelengths of electromagnetic radiation; exposing thesurface of the substrate to a precursor gas to form a surface reactant;providing an input gas over the surface of the substrate simultaneouslywith said precursor gas; preventing mixture of said precursor gas andsaid input gas with a purge gas; directing a beam of electromagneticradiation into said gaseous atmosphere, said beam converging said inputgas in close proximity to the surface of the substrate, but spaced afinite distance therefrom, to dissociate said input gas into a high fluxof generated reactive gas species; and reacting said generated reactivegas species with said surface reactant to form at least a monolayer onat least a portion of the surface of the substrate.
 22. The method ofclaim 21 wherein said precursor gas, said input gas, and said purge gasare each provided as a flow from a dispensing unit.
 23. The method claim22, wherein separating said precursor gas and said input gas isaccomplished by simultaneously pumping and evacuating said purge gas.24. The method of claim 22 further comprises causing relative motionbetween the surface of the substrate, said dispenser unit, and said beamto cause said dispenser unit and said beam to sweep over the surface ofthe substrate.
 25. The method of claim 21 further comprises directingsaid beam of electromagnetic radiation from a laser source through atransparent window of said chamber into said gaseous atmosphere.
 26. Themethod of claim 25 wherein said transparent window is a window selectedfrom the group consisting of quartz, sapphire, and zinc selenide. 27.The method of claim 21 further comprises causing relative motion betweenthe surface of the substrate and said beam to cause said beam to sweepover the surface of said substrate.
 28. The method of claim 21 whereinsaid beam is in the range of wavelengths of about 193 nm to about 248nm, and having energy in the range of about 100 to about 5000 mJ/cm².29. The method of claim 21, wherein said generated reactive gas speciesis selected from the group consisting of the noble gases, nitrogen,hydrogen, oxygen, and combinations thereof.
 30. The method of claim 21wherein said generated reactive gas species is selected from the groupconsisting of chlorine, fluorine, and molecules containing fluorine orchlorine.
 31. The method of claim 21 wherein the input gas is selectedfrom the group consisting of N₂O, NO₂, NH₃, H₂, H₂O, N₂, O₂, O₃, CCl₄,BCl₃, CDF₃, CF₄, SiH₄, CFCl₃, F₂CO, (FCO)₂, SF₅NF₂, N₂F₄, CF₃Br, CF₃NO,(CF₃)₂CO, CF₂HCl, CF₂HBr, CF₂Cl₂, CF₂Br₂, CF₂CFCl, CF₂CFH, CF₂CF₂CH₂,NH₃, CHF₃, fluorohalides, halocarbons, and combinations thereof.
 32. Themethod of claim 21 wherein the substrate is semiconductive.
 33. Themethod of claim 21 further comprises controlling the energycharacteristics of said beam to match absorption characteristics of saidinput gas to produce said high flux of said generated reactive gasspecies.
 34. The method of claim 21 where said transmission gas is a gasor mixture of gases that is non-attenuating to predetermined wavelengthsof said electromagnetic radiation.
 35. The method of claim 21 whereinsaid transmission gas is selected from the group consisting of argon,nitrogen, helium, neon, and combinations thereof.
 36. The method ofclaim 21 further comprises delivering a diagnostic beam of radiation tomonitor formation of said monolayer on the surface of the substrate. 37.The method of claim 21 wherein said purge gas is selected from the groupconsisting of argon, nitrogen, helium, neon, and combinations thereof.38. The method of claim 21 wherein said input gas is provided as a gaslayer flown over the surface of the substrate and having a thicknessthat is at least large enough to accommodate said finite distance. 39.The method of claim 21 wherein said finite distance is selected from theabout 2 millimeters to about 4 millimeters above the surface of theworkpiece.
 40. The method of claim 21 wherein said generated reactivegas species is selected from the group consisting of NO, OH, NH, N, F,CF₃, CF₂, CF, NF₂, NF, Cl, O, BCl₂, BCl, FCO, and combinations thereof.41. An atomic layer deposition method for forming monolayers on asurface of a substrate, comprising: loading the substrate into areaction chamber; pumping on said reaction chamber until a preselectedpressure is achieved; flowing simultaneously into said reaction chambera precursor gas, a purge gas, and an input gas; forming a surfacereactant by permitting said precursor gas to react with the surface ofthe substrate at selected locations; evacuating said purge gas and anygases/residuals in vicinity of said purge gas to prevent mixing of theprecursor and input gases; delivering a beam of electromagneticradiation into said input gas in close proximity to the surface of thesubstrate, but spaced a finite distance therefrom, to dissociate saidinput gas into a high flux of point of use generated reactive gasspecies; and reacting said generated reactive gas with said surfacereactant to form at least a monolayer at said selected locations. 42.The method of claim 41 further comprises flowing into said reactionchamber a transmission gas.
 43. The method of claim 41 wherein saidpreselected pressure is from about 0.1 Torr to about 100 Torr.
 44. Themethod of claim 41 wherein said monolayer is selected from the groupconsisting of elements and compounds.
 45. The method of claim 41 furthercomprises checking formation of said monolayer on the surface of thesubstrate for completeness.
 46. The method of claim 41 further comprisesdirecting said beam through a window of said reaction chamber.
 47. Themethod of claim 41 further comprises causing relative motion between thesubstrate and said beam.
 48. The method of claim 41 wherein said flowsof said input gas, precursor gas and purge gas are provided from adispenser unit, wherein said dispenser unit further includes a pair ofevacuation ports to evacuate at least said purge gas.
 49. The method ofclaim 48 further comprises causing relative motion between thesubstrate, said beam, and said dispenser unit.
 50. The method of claim41 wherein said beam is in the range of wavelengths of about 193 nm toabout 248 nm, and having energy in the range of about 100 to about 5000mJ/cm².
 51. The method of claim 41 wherein said generated reactive gasspecies is selected from the group consisting of the noble gases, N, H,F, Cl, O, NO, OH, NH, CF₃, CF₂, CF, NF₂, NF, BCl₂, BCl, FCO, moleculescontaining fluorine or chlorine, and combinations thereof.
 52. Themethod of claim 41 wherein the input gas is selected from the groupconsisting of N₂O, NO₂, NH₃, H₂, H₂O, N₂, O₂, O₃, CCl₄, BCl₃, CDF₃, CF₄,SiH₄, CFCl₃, F₂CO, (FCO)₂, SF₅NF₂, N₂F₄, CF₃Br, CF₃NO, (CF₃)₂CO, CF₂HCl,CF₂HBr, CF₂Cl₂, CF₂Br₂, CF₂CFCl, CF₂CFH, CF₂CF₂CH₂, NH₃, CHF₃,fluorohalides, halocarbons, and combinations thereof.
 53. The method ofclaim 41 further comprises controlling the energy characteristics ofsaid beam to match absorption characteristics of said input gas toproduce said high flux of said generated reactive gas species.
 54. Themethod of claim 42 where said transmission gas is a gas or mixture ofgases that is non-attenuating to predetermined wavelengths of saidelectromagnetic radiation.
 55. The method of claim 42 wherein saidtransmission gas is selected from the group consisting of argon,nitrogen, helium, neon, and combinations thereof.
 56. The method ofclaim 41 wherein said purge gas is selected from the group consisting ofargon, nitrogen, helium, neon, and combinations thereof.
 57. The methodof claim 41 wherein said input gas is provided as a gas layer flown overthe surface of the substrate and having a thickness that is at leastlarge enough to accommodate said finite distance.
 58. The method ofclaim 41 wherein said finite distance is selected from the about 2millimeters to about 4 millimeters above the surface of the workpiece.59. An atomic layer deposition method for forming a monolayer on asurface of a substrate, comprising: causing relative motion between thesubstrate, a dispenser unit, and a beam of electromagnetic radiation;exposing the surface of the substrate to a precursor gas flowing fromsaid dispenser unit to form a surface reactant thereon; providing aninput gas flowing from said dispensing unit above the surface of thesubstrate simultaneously with said precursor gas; providing a purge gasflowing from said dispensing unit to prevent mixing of said precursorgas and said input gas; generating a high flux of reactive gas speciesfrom said input gas with said beam of electromagnetic radiation; andreacting said reactive gas species with said surface reactant to form amonolayer on at least a portion of the surface of the substrate.
 60. Themethod of claim 59 wherein said generated reactive gas species isselected from the group consisting of the noble gases, N, H, F, Cl, O,NO, OH, NH, CF₃, CF₂, CF, NF₂, NF, BCl₂, BCl, FCO, molecules containingfluorine or chlorine, and combinations thereof.
 61. The method of claim59 wherein the input gas is selected from the group consisting of N₂O,NO₂, NH₃, H₂, H₂O, N₂, O₂, O₃, CCl₄, BCl₃, CDF₃, CF₄, SiH₄, CFCl₃, F₂CO,(FCO)₂, SF₅NF₂, N₂F₄, CF₃Br, CF₃NO, (CF₃)₂CO, CF₂HCl, CF₂HBr, CF₂Cl₂,CF₂Br₂, CF₂CFCl, CF₂CFH, CF₂CF₂CH₂, NH₃, CHF₃, fluorohalides,halocarbons, and combinations thereof.
 62. The method of claim 59wherein the substrate is semiconductive.
 63. The method of claim 59wherein said monolayer is selected from the group consisting of elementsand compounds.
 64. The method of claim 59 wherein said electromagneticradiation is in the range of wavelengths of about 193 nm to about 248nm, and having energy in the range of about 100 to about 5000 mJ/cm².65. The method of claim 59 wherein preventing the mixture of saidprecursor gas and said input gas with said purge gas is accomplished bysimultaneously flowing and evacuating said purge gas.
 66. The method ofclaim 59 wherein said beam is delivered into said input gas in closeproximity to the surface of the substrate, but spaced a finite distancetherefrom.
 67. The method of claim 59 wherein said reactive gas speciesis generated a distance between about 2 millimeters to about 4millimeters above the surface of the substrate.
 68. The method of claim59 further comprises directing said beam of electromagnetic radiationfrom a laser source through a transparent window of a reaction chamberinto said input gas.
 69. The method of claim 68 wherein said transparentwindow is a window selected from the group consisting of quartz,sapphire, and zinc selenide.
 70. The method of claim 59 wherein saidrelative motion causes said dispenser unit and said beam to sweep overthe surface of the substrate.
 71. The method of claim 68 furthercomprises directing said beam of electromagnetic radiation through agaseous atmosphere provided in said reaction chamber before beingdelivered into said input gas.
 72. The method of claim 71 wherein saidtransmission gas is a gas or mixture of gases that is non-attenuating topredetermined wavelengths of said electromagnetic radiation.
 73. Themethod of claim 71 wherein said transmission gas is selected from thegroup consisting of argon, nitrogen, helium, neon, and combinationsthereof.
 74. The method of claim 59 further comprises controlling theenergy characteristics of said beam to match absorption characteristicsof said input gas to produce said high flux of said generated reactivegas species.
 75. The method of claim 59 further comprises delivering adiagnostic beam of radiation to monitor formation of said monolayer onthe surface of the substrate.
 76. The method of claim 59 wherein saidpurge is selected from the group consisting of argon, nitrogen, helium,neon, and combinations thereof.
 77. The method of claim 66 wherein saidinput gas is provided as a gas layer flow over the surface of thesubstrate having a thickness that is at least large enough toaccommodate said finite distance.
 78. The method of claim 66 whereinsaid finite distance is selected from the about 2 millimeters to about 4millimeters above the surface of the workpiece.